Other articles related with "external quantum efficiency":
47303 Jiao-Xin Guo(郭娇欣), Jie Ding(丁杰), Chun-Lan Mo(莫春兰), Chang-Da Zheng(郑畅达), Shuan Pan(潘拴), Feng-Yi Jiang(江风益)
  Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate
    Chin. Phys. B   2020 Vol.29 (4): 47303-047303 [Abstract] (529) [HTML 1 KB] [PDF 1344 KB] (188)
18503 Byung-Ryool Hyun, Mikita Marus, Huaying Zhong(钟华英), Depeng Li(李德鹏), Haochen Liu(刘皓宸), Yue Xie(谢阅), Weon-kyu Koh, Bing Xu(徐冰), Yanjun Liu(刘言军), Xiao Wei Sun(孙小卫)
  Infrared light-emitting diodes based on colloidal PbSe/PbS core/shell nanocrystals
    Chin. Phys. B   2020 Vol.29 (1): 18503-018503 [Abstract] (676) [HTML 1 KB] [PDF 1218 KB] (179)
118103 Qianqian Wu(吴倩倩), Fan Cao(曹璠), Lingmei Kong(孔令媚), Xuyong Yang(杨绪勇)
  InP quantum dots-based electroluminescent devices
    Chin. Phys. B   2019 Vol.28 (11): 118103-118103 [Abstract] (698) [HTML 1 KB] [PDF 4160 KB] (328)
68801 Yang Jing (杨静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Liu Zong-Shun (刘宗顺), Chen Ping (陈平), Li Liang (李亮), Wu Liang-Liang (吴亮亮), Le Ling-Cong (乐伶聪), Li Xiao-Jing (李晓静), He Xiao-Guang (何晓光), Wang Hui (王辉), Zhu Jian-Jun (朱建军), Zhang Shu-Ming (张书明), Zhang Bao-Shun (张宝顺), Yang Hui (杨辉)
  Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells
    Chin. Phys. B   2014 Vol.23 (6): 68801-068801 [Abstract] (599) [HTML 1 KB] [PDF 429 KB] (477)
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